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| 2N6036 2N6039 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s 2N6036 IS A SGS-THOMSON PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS s GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIER DESCRIPTION The 2N6036 and 2N6039 are complementary silicon power Darlington transistors mounted in Jedec SOT-32 plastic package. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 7 K R2 Typ. = 230 ABSOLUTE MAXIMUM RATINGS Symbol Parameter PNP NPN V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c 25 C Storage Temperature Max. O perating Junction Temperature o Value 2N6036 2N6039 80 80 5 4 8 0.1 40 -65 to 150 150 Uni t V V V A A A W o o C C For PNP types voltage and current values are negative. June 1997 1/6 2N6036/2N6039 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 83.3 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEX I CBO I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (IE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = rated V CEO V CE = rated V CEO V CE = rated V CBO V CE = rated V CEO V EB = 5 V I C = 100 mA IC = 2 A IC = 4 A IC = 4 A IC = 2 A I C = 0.5 A IC = 2 A IC = 4 A I C = 0.75 A IB = 8 mA IB = 40 mA IB = 40 mA V CE = 3 V VCE = 3 V V CE = 3 V V CE = 3 V V CE = 10 V f = 1KHz f = 1MHz 100 200 pF pF 500 750 100 25 80 2 3 4 2.8 15000 Tc = 125 o C Min. Typ . Max. 0.1 0.5 0.1 0.1 2 Un it mA mA mA mA mA V V V V V V CEO(sus ) Collector-Emitter Sustaining Voltage V CE(sat ) V BE(s at) V BE h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current G ain hf e C CBO Small Signal Current Gain Collector Base Capacitance IE = 0 VCB = 10 V for NPN typ es for PNP types Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Derating Curve 2/6 2N6036/2N6039 DC Current Gain (NPN type) DC Current Gain (PNP type) Collector Emitter Saturation Voltage (NPN type) Collector Emitter Saturation Voltage (PNP type) Base Emitter Saturation Voltage (NPN type) Base Emitter Saturation Voltage (PNP type) 3/6 2N6036/2N6039 Base-Emitter On Voltage (NPN type) Base-Emitter On Voltage (PNP type) Freewheel Diode Forward Voltage (NPN type) Freewheel Diode Forward Voltage (PNP type) 4/6 2N6036/2N6039 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 2.15 3 4.15 3.8 3.2 2.54 0.084 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629 DIM. H2 0016114 5/6 2N6036/2N6039 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 6/6 |
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